課程首頁
6.774 微製造物理學:前端處理,2004年秋季課程
6.774 Physics of Microfabrication: Front End Processing, Fall 2004
譯者:李深遠
編輯:陳盈、洪曉慧

一塊暴露於沉積和蝕刻作用下的矽晶片。
(圖片來源於美國國家航空暨太空總署太空研究NASA Space Research。)
課程重點
這門課的特點是在課堂講稿部分有一套完整的講稿錄音。另外,還有一些課外作業
課程描述
這門課是提供給研究生的,重點在於理解那些用於矽積體電路元件製造中前端處理的基本原理。包括一些先進的物理模型以及諸如氧化﹑擴散﹑離子注入和外延生長等主要過程的實務應用。其他主題包括:高性能MOS和雙極型元件,包括超薄柵氧化層,注入損傷加強性擴散,進階度量學以及新材料如鍺化矽(SiGe)。
教學大綱
課程目標
徹底理解每一個單元程序步驟
揭示現代COMS程序流程和整合議題
介紹程序處理對元件電性能的影響
瞭解外延生長,特性和鍺化矽處理程序
SUPREM IV 程序模擬的基本瞭解
注意:這個領域每隔幾年就會發生引人注目的變化,關注最新的發展是一個持續學習的過程。
誰應該上這門課
任何願意在大學畢業後繼續研究或從事微電子學或微製造學的人。
先修課程
6.152J所涵蓋的基本概念將對這門課有所幫助但不是必須修習的課程。
所需課本
Plummer, James, Michael Deal, and Peter Griffin.《超大規模矽積體電路技術:基本原理,實際應用與建模》Silicon VLSI Technology: Fundamentals, Practice and Modeling. Upper Saddle River, NJ: Prentice Hall, 2000. ISBN: 0130850373.
評評分標準Grading
課程評分標準. |
|
活動 |
所佔百分比 |
作業 (5次作業) |
50% |
學期專題 |
50% |
學期專題
論文:不超過20頁
或者課堂報告(附帶講義):17分鐘+3分鐘提問/討論
教學時程、課堂講稿、技術需求、相關閱讀資料
執行這門課程網頁上的.rm檔需要使用RealOne™ 播放軟體RealOne™ Player software。
這部分包括專門為開放式課程錄製的講座錄音。講座按照主題列出,而不是按照日期。
這部分包括課程中使用的閱讀材料。Plummer, Deal和Griffin的書是唯一必須的教材,但是其他的閱讀材料有助於更好地理解本課程的主題。下表中列出的是每節課對應於教材上的閱讀材料。
下面引用到的書是課程中用到的具體出版物。
課本
Plummer, James, Michael Deal, and Peter Griffin.《超大規模矽積體電路技術:基本原理,實際應用與建模》Silicon VLSI Technology: Fundamentals, Practice and Modeling.. Upper Saddle River, NJ: Prentice Hall, 2000. ISBN: 0130850373.
Wolf, Stanley, and Richard Tauber.《超大型積體電路時代的矽程序》Silicon Processing for the VLSI Era .,2nd ed. Sunset Beach, CA: Lattice Press, 1999. ISBN: 0961672161.
Sze, Simon.《超大型積體電路技術》VLSI Technology.第二版. New York, NY: McGraw-Hill, 1988. ISBN: 0070627355.
Campbell, Stephen.《微電子製造科學原理與工程技術》The Science and Engineering of Microelectronic Fabrication.. 2nd ed. New York, NY: Oxford University Press, 2001. ISBN: 0195136055.
Vossen, John, and Werner Kern, eds.《薄膜程序》Thin Film Processes. Burlington, MA: Academic Press, 1978. ISBN: 0127282505.
Vossen, John, and Werner Kern.《薄膜程序》Thin Film Processes. Burlington, MA: Academic Press, 1991. ISBN: 0127282513.
Mayer, James W., and Sylvanus S. Lau.《電子材料科學:矽與砷化鎵積體電路》Electronic Materials Science: For Integrated Circuits in Si and GaAs..New York, NY: Macmillan, 1990. ISBN: 0023781408.
Pierret, Robert, and George W. Neudeck.《固態元件系列叢書》Modular Series on Solid State Devices.. Vol. 1-5. Upper Saddle River, NJ: Prentice Hall, 1987, 89, and 90. ISBN: 0201122979.
Pierret, Robert.《進階的半導體基本原理》. Advanced Semiconductor Fundamentals. Upper Saddle River, NJ: Prentice Hall, 2003. ISBN: 013061792X.
Taur, Yuan, and Tak H. Ning.《現代超大型積體電路基本原理》Fundamentals of Modern VLSI Devices.. Cambridge, UK: Cambridge University Press, 1998. ISBN: 0521559596.
期刊/會議記錄
Journals/Conference Proceedings
《IEEE電子元件學報》(月刊)IEEE Transactions on Electron Devices (published monthly)
《應用物理快報》Applied Physics Letters
《應用物理期刊》Journal of Applied Physics
《IEEE IEDM會議記錄》(每年12月出版)IEEE IEDM Conference Proceedings (published each December)
課 |
課程單元 |
重要日期 |
錄音檔 |
閱讀資料 |
1 |
6.774課程介紹
Introduction to
6.774 |
|
|
第1,2章 |
2 |
晶體生長,晶片製造,和矽片的基本性質 Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafer |
指派第1次作業 |
|
第3章 |
3 |
晶體生長,晶片製造,和矽片的基本性質(續)
Crystal Growth, Wafer
Fabrication, and Basic Properties of Si Wafers
(cont.) Wafer Cleaning and Gettering |
|
(RM - 16K) |
第3章和第4章的開始 |
4 |
矽片的清洗和吸附(續) Wafer Cleaning and Gettering (cont.) |
繳交第1次作業 |
(RM - 16K) |
第4章 |
5 |
矽片的清洗和吸附-污染測量技術
Wafer Cleaning and Gettering -
Contamination Measurement Techniques Oxidation and the Si/SiO2 Interface - Uses of Oxides and CV Measurement Techniques |
指派第2次作業 |
(RM - 16K) |
第4章和第6章的開始 |
6 |
氧化與矽/二氧化矽的介面:Deal/Grove模型,薄氧化層模型 Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models |
|
(RM - 16K) |
第6章 |
7 |
氧化與矽/二氧化矽的介面:二維效應,摻雜的影響,點缺陷 Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defects |
繳交第2次作業 |
(RM - 16K) |
第6章 |
8 |
摻雜的擴散-突變結的需要,費克定律,簡單分析Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic |
指派第3次作業 |
(RM - 16K) |
第7章 |
9 |
摻雜的擴散-擴散的數字技術,電場的影響 Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effec效應 |
|
(RM - 16K) |
第7章 |
10 |
摻雜的擴散-費米能級效應,I和V輔助擴散 Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion |
|
(RM - 16K) |
第7章 |
11 |
摻雜的擴散-複習原子模型,剖面測量技術 Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques |
繳交第3次作業 |
(RM - 16K) |
第7章 |
12 |
離子注入與退火-分析模型和蒙特卡洛 Ion Implantation and Annealing - Analytic Models and Monte Carlo |
|
(RM - 16K) |
第8章 |
13 |
離子注入與退火-能量損耗物理,損傷,暫態增強擴散介紹 Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED |
指派第4次作業 |
(RM - 16K) |
第8章 |
14 |
暫態增強擴散 (TED) -+1模型,(311) 缺陷和TED介紹 Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction |
|
(RM - 16K) |
第8章 |
15 |
暫態增強擴散 (TED)-模擬範例,TED計算,反向短通道效應詳述 Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail |
|
(RM - 16K) |
第8章 |
16 |
SUPREM IV 程序模擬 The SUPREM IV Process Simulator |
繳交第4次作業 |
(RM - 16K) |
|
17 |
薄膜沉積與外延生長-化學氣相沉積介紹, 矽的外延生長 Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth |
指派第5次作業 |
(RM - 16K) |
第9章 |
18 |
薄膜沉積與外延生長-化學氣相沉積範例與物理沉積 Thin Film Deposition and Epitaxy - CVD Examples and PVD |
|
(RM - 16K) |
第9章 |
19 |
薄膜沉積與外延生長-沉積形態模型 Thin Film Deposition and Epitaxy - Modeling Topography of Deposition |
繳交第5次作業 |
(RM - 16K) |
第9章 |
20 |
刻蝕-介紹Etching - Introduction |
|
(RM - 16K) |
第10章 |
21 |
刻蝕-多柵蝕刻,蝕刻不徹底的殘留物,刻蝕模型Etching - Poly Gate Etching, Stringers, Modeling of Etching |
|
(RM - 16K) |
第10章 |
22 |
矽化物,元件接觸,新柵材料 Silicides, Device Contacts, Novel Gate Materials |
|
(RM - 16K) |
第11章 |
23 |
應力下矽/鍺化矽的生長與程序和應力對元件的影響 Growth and Processing of Strained Si/SiGe and Stress Effects on Devices |
|
(RM - 16K) |
|
24-26 |
報告陳述Report Presentations |
|
|
|
這部分包括對於每個學生都必須完成的學期課程專題的描述。
學期專題
學期專題的主題舉例:
鍺化矽的雜質擴散Diffusion of Dopants in SiGe
全矽金屬柵的形成與電特性Fully-silicided metal gate formation and electrical properties
淺連結形成的離子植入雷射退火Laser annealing of ion implants for shallow junction formation
原子層沉積薄膜的CMOS應用Atomic Layer Deposition of thin films for CMOS applications
矽上介電層的進階蝕刻Advanced Etching of Dielectrics on Silicon
選擇性外延生長及其應用Selective-area Epitaxial Growth and its Applications
二階離子質譜Secondary Ion Mass Spectrometry
高K柵介電質的形成與性能Formation and Performance of High-k Gate Dielectrics
薄氧化層的進階晶片清洗技術矽中的金擴散Advanced Wafer Cleaning Techniques for Thin Gate Oxides Gold Diffusion in Silicon
深能階瞬態光譜Deep Level Transient Spectroscopy
矽壽命的測量Lifetime Measurements in Silicon
淺溝道隔離Shallow Trench Isolation
矽中的自擴散Self Diffusion (Si diffusion) in Silicon
TED中碳對矽和鍺化矽的影響 Impact of Carbon on TED in Si and SiGe
2維摻雜分佈的進階技術Advanced Techniques for 2D Dopant Profiling
多晶矽的摻雜擴散和柵損耗效應Dopant Diffusion in Polysilicon and the Gate Depletion Effect
短程絕緣體上矽的製造技術Smart-Cut SOI Fabrication Technique
矽製造的進階吸附作用Advanced Gettering in Silicon Manufacturing
其他(many others)
這個列表包括了一些例子,但並非完整範例。你可以選擇自己的題目,每個題目都必須經過老師的認可。
學期專題中必須研究現代期刊和會議記錄文獻,而不是簡單地從文本上摘取材料(大多數最新的議題都不是書本內容足以涵蓋的)。你可以有一些自己的計算,模擬或分析,(如批判性的想法和解釋),都可以作為學期專題的一部分。僅僅對文獻、文章進行回顧是不夠的。
對於學期專題,你有兩種選擇:寫論文,長度不多於20頁紙;或者在課上做口頭報告,17分鐘加3分鐘的提問時間。如果你選擇口頭報告,必須準備一些講義(報告材料可以由助教安排影印)。
口頭報告必須包括一個幻燈片,顯示標題,大綱,主體和結論摘要。論文必須包括對主題的介紹,主體(適當地分段),和結論部分。口頭報告和論文都必須列出所有的資料來源。
以下為系統擷取之英文原文
6.774 Physics of Microfabrication: Front End ProcessingFall 2004

A silicon wafer that may be exposed to deposition and etching processes. (Image courtesy of NASA Space Research.)
Course Highlights
This course features a full set of audio lectures in the lecture notes section. In addition, a number of assignments are available.
Course Description
This course is offered to graduates and focuses on understanding the fundamental principles of the "front-end" processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new materials such as Silicon Germanium (SiGe).
Special Features
Audio lectures Technical Requirements
RealOne™ Player software is required to run the .rm files found on this course site.
Syllabus
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Course Objectives
Thorough understanding of the unit process steps
Exposure to modern CMOS process flow and integration issues
Introduction to the impact of processing on device electrical performance
Awareness of epitaxial growth, characterization, and processing of SiGe
Basic understanding of the SUPREM IV process simulator
Note: This field changes dramatically every few years. Keeping up with the latest developments is a continuous process.
Who should take this Class
Anyone considering graduate research or a career in microelectronics or microfabrication.
Prerequisites
Exposure to basic concepts covered in 6.152J helpful but not required.
Required Text
Plummer, James, Michael Deal, and Peter Griffin. Silicon VLSI Technology: Fundamentals, Practice and Modeling. Upper Saddle River, NJ: Prentice Hall, 2000. ISBN: 0130850373.
Grading
Course grading policy. ACTIVITIES PERCENTAGEs
Homework (5 Homework Assignments) | 50% |
Term Project | 50% |
Term Project
Paper: maximum length of 20 pages, or
In-Class Presentation (with handouts): 17 minutes, plus 3 minutes for questions/discussion.
Calendar
Course calendar. Lec # TOPICS KEY DATES
1 |
Introduction to 6.774 CMOS Process Flow |
|
2 | Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers | Homework 1 out |
3 |
Crystal Growth, Wafer Fabrication, and Basic Properties of Si
Wafers (cont.) Wafer Cleaning and Gettering |
|
4 | Wafer Cleaning and Gettering (cont.) | Homework 1 due |
5 |
Wafer Cleaning and Gettering - Contamination Measurement
Techniques Oxidation and the Si/SiO2 Interface - Uses of Oxides and CV Measurement Techniques |
Homework 2 out |
6 | Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models | |
7 | Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defects | Homework 2 due |
8 | Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic | Homework 3 out |
9 | Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects | |
10 | Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion | |
11 | Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques | Homework 3 due |
12 | Ion Implantation and Annealing - Analytic Models and Monte Carlo | |
13 | Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED | Homework 4 out |
14 | Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction | |
15 | Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail | |
16 | The SUPREM IV Process Simulator | Homework 4 due |
17 | Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth | Homework 5 out |
18 | Thin Film Deposition and Epitaxy - CVD Examples and PVD | |
19 | Thin Film Deposition and Epitaxy - Modeling Topography of Deposition | Homework 5 due |
20 | Etching - Introduction | |
21 | Etching - Poly Gate Etching, Stringers, Modeling of Etching | |
22 | Silicides, Device Contacts, Novel Gate Materials | |
23 | Growth and Processing of Strained Si/SiGe and Stress Effects on Devices | |
24-26 | Report Presentations |
Readings
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This section contains readings that were used during the course. The book by Plummer, Deal and Griffin is the only required text but the other reading material is useful for obtaining a better understanding of the course topics. The readings for each session from the required textbook are listed below in the table.
Wherever possible, the book citations below reflect the specific editions used in the course.
Texts
Plummer, James, Michael Deal, and Peter Griffin. Silicon VLSI Technology: Fundamentals, Practice and Modeling. Upper Saddle River, NJ: Prentice Hall, 2000. ISBN: 0130850373.
Wolf, Stanley, and Richard Tauber. Silicon Processing for the VLSI Era . 2nd ed. Sunset Beach, CA: Lattice Press, 1999. ISBN: 0961672161.
Sze, Simon. VLSI Technology. 2nd ed. New York, NY: McGraw-Hill, 1988. ISBN: 0070627355.
Campbell, Stephen. The Science and Engineering of Microelectronic Fabrication. 2nd ed. New York, NY: Oxford University Press, 2001. ISBN: 0195136055.
Vossen, John, and Werner Kern, eds. Thin Film Processes. Burlington, MA: Academic Press, 1978. ISBN: 0127282505.
Vossen, John, and Werner Kern. Thin Film Processes. Burlington, MA: Academic Press, 1991. ISBN: 0127282513.
Mayer, James W., and Sylvanus S. Lau. Electronic Materials Science: For Integrated Circuits in Si and GaAs. New York, NY: Macmillan, 1990. ISBN: 0023781408.
Pierret, Robert, and George W. Neudeck. Modular Series on Solid State Devices. Vol. 1-5. Upper Saddle River, NJ: Prentice Hall, 1987, 89, and 90. ISBN: 0201122979.
Pierret, Robert. Advanced Semiconductor Fundamentals. Upper Saddle River, NJ: Prentice Hall, 2003. ISBN: 013061792X.
Taur, Yuan, and Tak H. Ning. Fundamentals of Modern VLSI Devices. Cambridge, UK: Cambridge University Press, 1998. ISBN: 0521559596.
Journals/Conference Proceedings
IEEE Transactions on Electron Devices (published monthly)
Applied Physics Letters
Journal of Applied Physics
IEEE IEDM Conference Proceedings (published each December)
Readings by Session
Course readings. Lec # TOPICS READINGS
1 |
Introduction to 6.774 CMOS Process Flow |
Chapters 1 and 2 |
2 | Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers | Chapter 3 |
3 |
Crystal Growth, Wafer Fabrication, and Basic Properties of Si
Wafers (cont.) Wafer Cleaning and Gettering |
Chapter 3 and start chapter 4 |
4 | Wafer Cleaning and Gettering (cont.) | Chapter 4 |
5 |
Wafer Cleaning and Gettering - Contamination Measurement
Techniques Oxidation and the Si/SiO2 Interface - Uses of Oxides and CV Measurement Techniques |
Chapter 4 and start chapter 6 |
6 | Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models | Chapter 6 |
7 | Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defects | Chapter 6 |
8 | Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic | Chapter 7 |
9 | Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects | Chapter 7 |
10 | Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion | Chapter 7 |
11 | Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques | Chapter 7 |
12 | Ion Implantation and Annealing - Analytic Models and Monte Carlo | Chapter 8 |
13 | Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED | Chapter 8 |
14 | Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction | Chapter 8 |
15 | Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail | Chapter 8 |
16 | The SUPREM IV Process Simulator | |
17 | Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth | Chapter 9 |
18 | Thin Film Deposition and Epitaxy - CVD Examples and PVD | Chapter 9 |
19 | Thin Film Deposition and Epitaxy - Modeling Topography of Deposition | Chapter 9 |
20 | Etching - Introduction | Chapter 10 |
21 | Etching - Poly Gate Etching, Stringers, Modeling of Etching | Chapter 10 |
22 | Silicides, Device Contacts, Novel Gate Materials | Chapter 11 |
23 | Growth and Processing of Strained Si/SiGe and Stress Effects on Devices | |
24-26 | Report Presentations |
Lecture Notes
RealOne™ Player software is required to run the .rm files in this section.
This section includes audio lectures that were recorded specifically for OpenCourseWare. Lectures are presented by topic, and not necessarily by date.
These files are also available on iTunes®.
Lecture files. Lec # TOPICS AUDIO
1 |
Introduction to 6.774 CMOS Process Flow |
|
2 | Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers | |
3 |
Crystal Growth, Wafer Fabrication, and Basic Properties of Si
Wafers (cont.) Wafer Cleaning and Gettering |
(RM - 16K) |
4 | Wafer Cleaning and Gettering (cont.) | (RM - 16K) |
5 |
Wafer Cleaning and Gettering - Contamination Measurement
Techniques Oxidation and the Si/SiO2 Interface - Uses of Oxides and CV Measurement Techniques |
(RM - 16K) |
6 | Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models | (RM - 16K) |
7 | Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defects | (RM - 16K) |
8 | Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic | (RM - 16K) |
9 | Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects | (RM - 16K) |
10 | Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion | (RM - 16K) |
11 | Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques | (RM - 16K) |
12 | Ion Implantation and Annealing - Analytic Models and Monte Carlo | (RM - 16K) |
13 | Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED | (RM - 16K) |
14 | Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction | (RM - 16K) |
15 | Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail | (RM - 16K) |
16 | The SUPREM IV Process Simulator | (RM - 16K) |
17 | Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth | (RM - 16K) |
18 | Thin Film Deposition and Epitaxy - CVD Examples and PVD | (RM - 16K) |
19 | Thin Film Deposition and Epitaxy - Modeling Topography of Deposition | (RM - 16K) |
20 | Etching - Introduction | (RM - 16K) |
21 | Etching - Poly Gate Etching, Stringers, Modeling of Etching | (RM - 16K) |
22 | Silicides, Device Contacts, Novel Gate Materials | (RM - 16K) |
23 | Growth and Processing of Strained Si/SiGe and Stress Effects on Devices | (RM - 16K) |
24-26 | Report Presentations |
Projects
This section contains a description of the term project that every student was required to complete.
Term ProjectSome examples of topics for the term project:
Diffusion of Dopants in SiGe Fully-silicided metal gate formation and electrical properties Laser annealing of ion implants for shallow junction formation Atomic Layer Deposition of thin films for CMOS applications Advanced Etching of Dielectrics on Silicon Selective-area Epitaxial Growth and its Applications Secondary Ion Mass Spectrometry Formation and Performance of High-k Gate Dielectrics Advanced Wafer Cleaning Techniques for Thin Gate Oxides Gold Diffusion in Silicon Deep Level Transient Spectroscopy Lifetime Measurements in Silicon Shallow Trench Isolation Self Diffusion (Si diffusion) in Silicon Impact of Carbon on TED in Si and SiGe Advanced Techniques for 2D Dopant Profiling Dopant Diffusion in Polysilicon and the Gate Depletion Effect Smart-Cut SOI Fabrication Technique Advanced Gettering in Silicon Manufacturing ....... (many others)This list includes some examples, and is by no means complete. You may suggest your own topic. All topics must be approved by the Instructor.
The term project should involve doing research in the modern journal and conference proceedings literature, not simply taking material from texts (most topics are ‘new enough’ that textbook material would not be adequate to cover them, in any case). You may also do some of your own calculations, simulations, or analysis (e.g. critical thinking and explanations) as part of your term project. Regurgitation of a literature article is not considered sufficient.
You have two choices for your term project: written paper, less than and or equal to 20 pages in length, or an oral presentation in class, 17 minutes plus 3 minutes for questions. If you do an oral presentation, you must make handouts for the class (copies of your presentation materials can be made by my assistant, by arrangement).
Your oral presentation should include a title slide, outline slide, main body, and summary or conclusions slide. Your written paper must include an introduction to the topic, main body (with sections, where appropriate), and summary or conclusions section. Both oral and written term projects must include full references for where you obtained your information.
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