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6.774 微製造物理學:前端處理,2004年秋季課程

6.774 Physics of Microfabrication: Front End Processing, Fall 2004

譯者:李深遠

編輯:陳盈、洪曉慧

Image of a silicon wafer.

一塊暴露於沉積和蝕刻作用下的矽晶片。

(圖片來源於美國國家航空暨太空總署太空研究NASA Space Research。)

課程重點

這門課的特點是在課堂講稿部分有一套完整的講稿錄音。另外,還有一些課外作業

課程描述

這門課是提供給研究生的,重點在於理解那些用於矽積體電路元件製造中前端處理的基本原理。包括一些先進的物理模型以及諸如氧化﹑擴散﹑離子注入和外延生長等主要過程的實務應用。其他主題包括:高性能MOS和雙極型元件,包括超薄柵氧化層,注入損傷加強性擴散,進階度量學以及新材料如鍺化矽(SiGe)

教學大綱

課程目標

徹底理解每一個單元程序步驟

揭示現代COMS程序流程和整合議題

介紹程序處理對元件電性能的影響

瞭解外延生長,特性和鍺化矽處理程序

SUPREM IV 程序模擬的基本瞭解

注意:這個領域每隔幾年就會發生引人注目的變化,關注最新的發展是一個持續學習的過程。

誰應該上這門課

任何願意在大學畢業後繼續研究或從事微電子學或微製造學的人。

 

先修課程

6.152J所涵蓋的基本概念將對這門課有所幫助但不是必須修習的課程。

所需課本

Plummer, James, Michael Deal, and Peter Griffin.《超大規模矽積體電路技術:基本原理,實際應用與建模》Silicon VLSI Technology: Fundamentals, Practice and Modeling. Upper Saddle River, NJ: Prentice Hall, 2000. ISBN: 0130850373.

 

評評分標準Grading

 

課程評分標準.

活動

所佔百分比

作業 (5次作業)

50%

學期專題

50%

學期專題

論文:不超過20

或者課堂報告(附帶講義):17分鐘+3分鐘提問/討論

教學時程、課堂講稿、技術需求、相關閱讀資料

執行這門課程網頁上的.rm檔需要使用RealOne™ 播放軟體RealOne™ Player software

這部分包括專門為開放式課程錄製的講座錄音。講座按照主題列出,而不是按照日期。

這部分包括課程中使用的閱讀材料。Plummer, DealGriffin的書是唯一必須的教材,但是其他的閱讀材料有助於更好地理解本課程的主題。下表中列出的是每節課對應於教材上的閱讀材料。

下面引用到的書是課程中用到的具體出版物。

課本

Plummer, James, Michael Deal, and Peter Griffin.《超大規模矽積體電路技術:基本原理,實際應用與建模》Silicon VLSI Technology: Fundamentals, Practice and Modeling.. Upper Saddle River, NJ: Prentice Hall, 2000. ISBN: 0130850373.

Wolf, Stanley, and Richard Tauber.《超大型積體電路時代的矽程序》Silicon Processing for the VLSI Era .2nd ed. Sunset Beach, CA: Lattice Press, 1999. ISBN: 0961672161.

Sze, Simon.《超大型積體電路技術》VLSI Technology.第二版. New York, NY: McGraw-Hill, 1988. ISBN: 0070627355.

Campbell, Stephen.《微電子製造科學原理與工程技術》The Science and Engineering of Microelectronic Fabrication.. 2nd ed. New York, NY: Oxford University Press, 2001. ISBN: 0195136055.

Vossen, John, and Werner Kern, eds.《薄膜程序》Thin Film Processes. Burlington, MA: Academic Press, 1978. ISBN: 0127282505.

Vossen, John, and Werner Kern.《薄膜程序》Thin Film Processes. Burlington, MA: Academic Press, 1991. ISBN: 0127282513.

Mayer, James W., and Sylvanus S. Lau.《電子材料科學:矽與砷化鎵積體電路》Electronic Materials Science: For Integrated Circuits in Si and GaAs..New York, NY: Macmillan, 1990. ISBN: 0023781408.

Pierret, Robert, and George W. Neudeck.《固態元件系列叢書》Modular Series on Solid State Devices.. Vol. 1-5. Upper Saddle River, NJ: Prentice Hall, 1987, 89, and 90. ISBN: 0201122979.

Pierret, Robert.《進階的半導體基本原理》. Advanced Semiconductor Fundamentals. Upper Saddle River, NJ: Prentice Hall, 2003. ISBN: 013061792X.

Taur, Yuan, and Tak H. Ning.《現代超大型積體電路基本原理》Fundamentals of Modern VLSI Devices.. Cambridge, UK: Cambridge University Press, 1998. ISBN: 0521559596.

期刊/會議記錄

Journals/Conference Proceedings

IEEE電子元件學報》(月刊)IEEE Transactions on Electron Devices (published monthly)

《應用物理快報》Applied Physics Letters

《應用物理期刊》Journal of Applied Physics

IEEE IEDM會議記錄》(每年12月出版)IEEE IEDM Conference Proceedings (published each December)

 

課程單元

重要日期

錄音檔

閱讀資料

1

6.774課程介紹

Introduction to 6.774
CMOS 程序流程CMOS Process Flow

 

 

12

2

晶體生長,晶片製造,和矽片的基本性質

Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafer

指派第1次作業

 

3

3

晶體生長,晶片製造,和矽片的基本性質(續)

Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)
矽片的清洗和吸附

Wafer Cleaning and Gettering

 

(RM - 16K)

3章和第4章的開始

4

矽片的清洗和吸附(續)

Wafer Cleaning and Gettering (cont.)

繳交第1次作業

(RM - 16K)

4

5

矽片的清洗和吸附-污染測量技術

Wafer Cleaning and Gettering - Contamination Measurement Techniques
氧化與矽/二氧化矽的介面-氧化與電容電壓測量技術

Oxidation and the Si/SiO2 Interface - Uses of Oxides and CV Measurement Techniques

指派第2次作業

(RM - 16K)

4章和第6章的開始

6

氧化與矽/二氧化矽的介面:Deal/Grove模型,薄氧化層模型

Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models

 

(RM - 16K)

6

7

氧化與矽/二氧化矽的介面:二維效應,摻雜的影響,點缺陷

Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defects

繳交第2次作業

(RM - 16K)

6

8

摻雜的擴散-突變結的需要,費克定律,簡單分析Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic

指派第3次作業

(RM - 16K)

7

9

摻雜的擴散-擴散的數字技術,電場的影響

Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effec效應

 

(RM - 16K)

7

10

摻雜的擴散-費米能級效應,IV輔助擴散

Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion

 

(RM - 16K)

7

11

摻雜的擴散-複習原子模型,剖面測量技術

Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques

繳交第3次作業

(RM - 16K)

7

12

離子注入與退火-分析模型和蒙特卡洛

Ion Implantation and Annealing - Analytic Models and Monte Carlo

 

(RM - 16K)

8

13

離子注入與退火-能量損耗物理,損傷,暫態增強擴散介紹

Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED

指派第4次作業

(RM - 16K)

8

14

暫態增強擴散 (TED)+1模型,(311) 缺陷和TED介紹

Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction

 

(RM - 16K)

8

15

暫態增強擴散 (TED)-模擬範例,TED計算,反向短通道效應詳述

Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail

 

(RM - 16K)

8

16

SUPREM IV 程序模擬

The SUPREM IV Process Simulator

繳交第4次作業

(RM - 16K)

 

17

薄膜沉積與外延生長-化學氣相沉積介紹, 矽的外延生長

Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth

指派第5次作業

(RM - 16K)

9

18

薄膜沉積與外延生長-化學氣相沉積範例與物理沉積

Thin Film Deposition and Epitaxy - CVD Examples and PVD

 

(RM - 16K)

9

19

薄膜沉積與外延生長-沉積形態模型

Thin Film Deposition and Epitaxy - Modeling Topography of Deposition

繳交第5次作業

(RM - 16K)

9

20

刻蝕-介紹Etching - Introduction

 

(RM - 16K)

10

21

刻蝕-多柵蝕刻,蝕刻不徹底的殘留物,刻蝕模型Etching - Poly Gate Etching, Stringers, Modeling of Etching

 

(RM - 16K)

10

22

矽化物,元件接觸,新柵材料

Silicides, Device Contacts, Novel Gate Materials

 

(RM - 16K)

11

23

應力下矽/鍺化矽的生長與程序和應力對元件的影響

Growth and Processing of Strained Si/SiGe and Stress Effects on Devices

 

(RM - 16K)

 

24-26

報告陳述Report Presentations

 

 

 

 

專題

這部分包括對於每個學生都必須完成的學期課程專題的描述。

學期專題

學期專題的主題舉例:

鍺化矽的雜質擴散Diffusion of Dopants in SiGe

全矽金屬柵的形成與電特性Fully-silicided metal gate formation and electrical properties

淺連結形成的離子植入雷射退火Laser annealing of ion implants for shallow junction formation

原子層沉積薄膜的CMOS應用Atomic Layer Deposition of thin films for CMOS applications

矽上介電層的進階蝕刻Advanced Etching of Dielectrics on Silicon

選擇性外延生長及其應用Selective-area Epitaxial Growth and its Applications

 

二階離子質譜Secondary Ion Mass Spectrometry

 

K柵介電質的形成與性能Formation and Performance of High-k Gate Dielectrics

 

薄氧化層的進階晶片清洗技術矽中的金擴散Advanced Wafer Cleaning Techniques for Thin Gate Oxides Gold Diffusion in Silicon

深能階瞬態光譜Deep Level Transient Spectroscopy

矽壽命的測量Lifetime Measurements in Silicon

 

淺溝道隔離Shallow Trench Isolation

 

矽中的自擴散Self Diffusion (Si diffusion) in Silicon

 

TED中碳對矽和鍺化矽的影響 Impact of Carbon on TED in Si and SiGe

 

2維摻雜分佈的進階技術Advanced Techniques for 2D Dopant Profiling

 

多晶矽的摻雜擴散和柵損耗效應Dopant Diffusion in Polysilicon and the Gate Depletion Effect

 

短程絕緣體上矽的製造技術Smart-Cut SOI Fabrication Technique

 

矽製造的進階吸附作用Advanced Gettering in Silicon Manufacturing

 

其他(many others)

 

這個列表包括了一些例子,但並非完整範例。你可以選擇自己的題目,每個題目都必須經過老師的認可。

學期專題中必須研究現代期刊和會議記錄文獻,而不是簡單地從文本上摘取材料(大多數最新的議題都不是書本內容足以涵蓋的)。你可以有一些自己的計算,模擬或分析,(如批判性的想法和解釋),都可以作為學期專題的一部分。僅僅對文獻、文章進行回顧是不夠的。

對於學期專題,你有兩種選擇:寫論文,長度不多於20頁紙;或者在課上做口頭報告,17分鐘加3分鐘的提問時間。如果你選擇口頭報告,必須準備一些講義(報告材料可以由助教安排影印)。

口頭報告必須包括一個幻燈片,顯示標題,大綱,主體和結論摘要。論文必須包括對主題的介紹,主體(適當地分段),和結論部分。口頭報告和論文都必須列出所有的資料來源。

 

以下為系統擷取之英文原文

6.774 Physics of Microfabrication: Front End Processing

Fall 2004

Image of a silicon wafer.

A silicon wafer that may be exposed to deposition and etching processes. (Image courtesy of NASA Space Research.)



Course Highlights

This course features a full set of audio lectures in the lecture notes section. In addition, a number of assignments are available.

Course Description

This course is offered to graduates and focuses on understanding the fundamental principles of the "front-end" processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new materials such as Silicon Germanium (SiGe).

Special Features

Audio lectures Technical Requirements

RealOne™ Player software is required to run the .rm files found on this course site.





Syllabus

Amazon logo Help support MIT OpenCourseWare by shopping at Amazon.com! MIT OpenCourseWare offers direct links to Amazon.com to purchase the books cited in this course. Click on the book titles and purchase the book from Amazon.com, and MIT OpenCourseWare will receive up to 10% of all purchases you make. Your support will enable MIT to continue offering open access to MIT courses.


Course Objectives

Thorough understanding of the unit process steps

Exposure to modern CMOS process flow and integration issues

Introduction to the impact of processing on device electrical performance

Awareness of epitaxial growth, characterization, and processing of SiGe

Basic understanding of the SUPREM IV process simulator

Note: This field changes dramatically every few years. Keeping up with the latest developments is a continuous process.



Who should take this Class

Anyone considering graduate research or a career in microelectronics or microfabrication.



Prerequisites

Exposure to basic concepts covered in 6.152J helpful but not required.



Required Text

Plummer, James, Michael Deal, and Peter Griffin. Silicon VLSI Technology: Fundamentals, Practice and Modeling. Upper Saddle River, NJ: Prentice Hall, 2000. ISBN: 0130850373.



Grading


Course grading policy. ACTIVITIES PERCENTAGEs
Homework (5 Homework Assignments) 50%
Term Project 50%





Term Project

Paper: maximum length of 20 pages, or

In-Class Presentation (with handouts): 17 minutes, plus 3 minutes for questions/discussion.





Calendar

Course calendar. Lec # TOPICS KEY DATES
1 Introduction to 6.774

CMOS Process Flow
 
2 Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers Homework 1 out
3 Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)

Wafer Cleaning and Gettering
 
4 Wafer Cleaning and Gettering (cont.) Homework 1 due
5 Wafer Cleaning and Gettering - Contamination Measurement Techniques

Oxidation and the Si/SiO2 Interface - Uses of Oxides and CV Measurement Techniques
Homework 2 out
6 Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models  
7 Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defects Homework 2 due
8 Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic Homework 3 out
9 Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects  
10 Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion  
11 Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques Homework 3 due
12 Ion Implantation and Annealing - Analytic Models and Monte Carlo  
13 Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED Homework 4 out
14 Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction  
15 Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail  
16 The SUPREM IV Process Simulator Homework 4 due
17 Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth Homework 5 out
18 Thin Film Deposition and Epitaxy - CVD Examples and PVD  
19 Thin Film Deposition and Epitaxy - Modeling Topography of Deposition Homework 5 due
20 Etching - Introduction  
21 Etching - Poly Gate Etching, Stringers, Modeling of Etching  
22 Silicides, Device Contacts, Novel Gate Materials  
23 Growth and Processing of Strained Si/SiGe and Stress Effects on Devices  
24-26 Report Presentations  




Readings

Amazon logo Help support MIT OpenCourseWare by shopping at Amazon.com! MIT OpenCourseWare offers direct links to Amazon.com to purchase the books cited in this course. Click on the book titles and purchase the book from Amazon.com, and MIT OpenCourseWare will receive up to 10% of all purchases you make. Your support will enable MIT to continue offering open access to MIT courses.

This section contains readings that were used during the course. The book by Plummer, Deal and Griffin is the only required text but the other reading material is useful for obtaining a better understanding of the course topics. The readings for each session from the required textbook are listed below in the table.

Wherever possible, the book citations below reflect the specific editions used in the course.



Texts

Plummer, James, Michael Deal, and Peter Griffin. Silicon VLSI Technology: Fundamentals, Practice and Modeling. Upper Saddle River, NJ: Prentice Hall, 2000. ISBN: 0130850373.

Wolf, Stanley, and Richard Tauber. Silicon Processing for the VLSI Era . 2nd ed. Sunset Beach, CA: Lattice Press, 1999. ISBN: 0961672161.

Sze, Simon. VLSI Technology. 2nd ed. New York, NY: McGraw-Hill, 1988. ISBN: 0070627355.

Campbell, Stephen. The Science and Engineering of Microelectronic Fabrication. 2nd ed. New York, NY: Oxford University Press, 2001. ISBN: 0195136055.

Vossen, John, and Werner Kern, eds. Thin Film Processes. Burlington, MA: Academic Press, 1978. ISBN: 0127282505.

Vossen, John, and Werner Kern. Thin Film Processes. Burlington, MA: Academic Press, 1991. ISBN: 0127282513.

Mayer, James W., and Sylvanus S. Lau. Electronic Materials Science: For Integrated Circuits in Si and GaAs. New York, NY: Macmillan, 1990. ISBN: 0023781408.

Pierret, Robert, and George W. Neudeck. Modular Series on Solid State Devices. Vol. 1-5. Upper Saddle River, NJ: Prentice Hall, 1987, 89, and 90. ISBN: 0201122979.

Pierret, Robert. Advanced Semiconductor Fundamentals. Upper Saddle River, NJ: Prentice Hall, 2003. ISBN: 013061792X.

Taur, Yuan, and Tak H. Ning. Fundamentals of Modern VLSI Devices. Cambridge, UK: Cambridge University Press, 1998. ISBN: 0521559596.



Journals/Conference Proceedings

IEEE Transactions on Electron Devices (published monthly)

Applied Physics Letters

Journal of Applied Physics

IEEE IEDM Conference Proceedings (published each December)



Readings by Session


Course readings. Lec # TOPICS READINGS
1 Introduction to 6.774

CMOS Process Flow
Chapters 1 and 2
2 Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers Chapter 3
3 Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)

Wafer Cleaning and Gettering
Chapter 3 and start chapter 4
4 Wafer Cleaning and Gettering (cont.) Chapter 4
5 Wafer Cleaning and Gettering - Contamination Measurement Techniques

Oxidation and the Si/SiO2 Interface - Uses of Oxides and CV Measurement Techniques
Chapter 4 and start chapter 6
6 Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models Chapter 6
7 Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defects Chapter 6
8 Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic Chapter 7
9 Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects Chapter 7
10 Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion Chapter 7
11 Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques Chapter 7
12 Ion Implantation and Annealing - Analytic Models and Monte Carlo Chapter 8
13 Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED Chapter 8
14 Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction Chapter 8
15 Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail Chapter 8
16 The SUPREM IV Process Simulator  
17 Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth Chapter 9
18 Thin Film Deposition and Epitaxy - CVD Examples and PVD Chapter 9
19 Thin Film Deposition and Epitaxy - Modeling Topography of Deposition Chapter 9
20 Etching - Introduction Chapter 10
21 Etching - Poly Gate Etching, Stringers, Modeling of Etching Chapter 10
22 Silicides, Device Contacts, Novel Gate Materials Chapter 11
23 Growth and Processing of Strained Si/SiGe and Stress Effects on Devices  
24-26 Report Presentations  




Lecture Notes

RealOne™ Player software is required to run the .rm files in this section.

This section includes audio lectures that were recorded specifically for OpenCourseWare. Lectures are presented by topic, and not necessarily by date.

These files are also available on iTunes®.


Lecture files. Lec # TOPICS AUDIO
1 Introduction to 6.774

CMOS Process Flow
 
2 Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers  
3 Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)

Wafer Cleaning and Gettering
(RM - 16K)
4 Wafer Cleaning and Gettering (cont.) (RM - 16K)
5 Wafer Cleaning and Gettering - Contamination Measurement Techniques

Oxidation and the Si/SiO2 Interface - Uses of Oxides and CV Measurement Techniques
(RM - 16K)
6 Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models (RM - 16K)
7 Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defects (RM - 16K)
8 Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic (RM - 16K)
9 Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects (RM - 16K)
10 Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion (RM - 16K)
11 Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques (RM - 16K)
12 Ion Implantation and Annealing - Analytic Models and Monte Carlo (RM - 16K)
13 Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED (RM - 16K)
14 Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction (RM - 16K)
15 Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail (RM - 16K)
16 The SUPREM IV Process Simulator (RM - 16K)
17 Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth (RM - 16K)
18 Thin Film Deposition and Epitaxy - CVD Examples and PVD (RM - 16K)
19 Thin Film Deposition and Epitaxy - Modeling Topography of Deposition (RM - 16K)
20 Etching - Introduction (RM - 16K)
21 Etching - Poly Gate Etching, Stringers, Modeling of Etching (RM - 16K)
22 Silicides, Device Contacts, Novel Gate Materials (RM - 16K)
23 Growth and Processing of Strained Si/SiGe and Stress Effects on Devices (RM - 16K)
24-26 Report Presentations  




Projects

This section contains a description of the term project that every student was required to complete.

Term Project

Some examples of topics for the term project:

Diffusion of Dopants in SiGe Fully-silicided metal gate formation and electrical properties Laser annealing of ion implants for shallow junction formation Atomic Layer Deposition of thin films for CMOS applications Advanced Etching of Dielectrics on Silicon Selective-area Epitaxial Growth and its Applications Secondary Ion Mass Spectrometry Formation and Performance of High-k Gate Dielectrics Advanced Wafer Cleaning Techniques for Thin Gate Oxides Gold Diffusion in Silicon Deep Level Transient Spectroscopy Lifetime Measurements in Silicon Shallow Trench Isolation Self Diffusion (Si diffusion) in Silicon Impact of Carbon on TED in Si and SiGe Advanced Techniques for 2D Dopant Profiling Dopant Diffusion in Polysilicon and the Gate Depletion Effect Smart-Cut SOI Fabrication Technique Advanced Gettering in Silicon Manufacturing ....... (many others)

This list includes some examples, and is by no means complete. You may suggest your own topic. All topics must be approved by the Instructor.

The term project should involve doing research in the modern journal and conference proceedings literature, not simply taking material from texts (most topics are ‘new enough’ that textbook material would not be adequate to cover them, in any case). You may also do some of your own calculations, simulations, or analysis (e.g. critical thinking and explanations) as part of your term project. Regurgitation of a literature article is not considered sufficient.

You have two choices for your term project: written paper, less than and or equal to 20 pages in length, or an oral presentation in class, 17 minutes plus 3 minutes for questions. If you do an oral presentation, you must make handouts for the class (copies of your presentation materials can be made by my assistant, by arrangement).

Your oral presentation should include a title slide, outline slide, main body, and summary or conclusions slide. Your written paper must include an introduction to the topic, main body (with sections, where appropriate), and summary or conclusions section. Both oral and written term projects must include full references for where you obtained your information.




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